dim a b d e g h k 4.70 max 2.50 0.20 1.70 max 0.45+0.15/-0.10 4.25 max 1.50 0.10 0.40 typ 1.75 max 0.75 min 0.5+0.10/-0.05 sot-89 c j g d 123 2. collector (heat sink) a c k j f millimeters h 1. base 3. emitter b e ff d + _ + _ 1994. 3. 21 1/2 semiconductor technical data kta1001 epitaxial planar pnp transistor revision no : 0 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-35v, i e =0 - - -100 na emitter cut-off current i ebo v eb =-8v, i c =0 - - -100 na collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -20 - - v emitter-base breakdown voltage v (br)ebo i e =-1ma, i c =0 -8 - - v dc current gain h fe (1) (note2) v ce =-2v, i c =-0.5a 100 - 320 h fe (2) v ce =-2v, i c =-3a 70 - - collector-emitter saturation voltage v ce(sat) i c =-3a, i b =-75ma - - -0.5 v base-emitter voltage v be v ce =-2v, i c =-3a - - -1.5 v transition frequency f t v ce =-2v, i c =-0.5a - 170 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 62 - pf characteristic symbol rating unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -8 v collector current dc i c -3 a pulse (note1) i cp -5 a base current i b -0.5 a collector power dissipation ta=25 p c 0.5 w tc=25 * 1 junction temperature t j 150 storage temperature range t stg -55 150 note1 : pulse test : pulse width=10ms(max.) duty cycle=30%(max.) *pc : kta1001 mounted on ceramic substrate(250mm 2 x0.8t) note2 : h fe (1) classification 0:100 200, y:160 320 camera strobo flash application. high current application. features h fe =100 320 (v ce =-2v, i c =-0.5a). h fe =70(min.) (v ce =-2v, i c =-3a). low collector saturation voltage. : v ce(sat) =-0.5v(max.) (i c =-3a, i b =-75ma). high power dissipation. : p c =1w(tc=25 ), p c =0.5w(ta=25 ). maximum rating (ta=25 ) k type name h rank fe lot no. marking
1994. 3. 21 2/2 kta1001 revision no : 0 i - v c ce ce collector-emitter voltage v (v) 0 -0.8 c 0 collector current i (a) -1 safe operating area ce collector-emitter voltage v (v) -0.1 -0.03 c collector current i (a) collector power disspation p (w) c 0.2 20 0 ambient temperature ta ( c ) a c p - t ce -0.01 collector current i (a) c c ce v (sat) - i 30 dc current gain h fe -0.01 collector current i (a) c c fe h - i -1.6 -2.4 -3.2 -4.0 -2 -3 -4 common emitter ta=25 c i =-1ma b -2ma -3ma -5ma -10ma -20ma -50ma -100ma voltage v (sat) (v) collector-emitter saturation -0.03 -0.1 -0.3 -1 -3 -10 -0.01 -0.03 -0.05 -0.1 -0.3 -0.5 -1 common eitter i /i =40 c b ta=100 c ta=25 c ta=-25 c -0.03 -0.1 -0.3 -1 -3 -10 50 100 300 500 1k 2k common emitter v =-1v ce ta=100 c ta=25 c ta=-25 c 40 60 80 100 120 140 160 0 0.4 0.6 0.8 1.0 1.2 mounted on ceramic substrate (250mm x0.8t) ta=25 c 1 2 1 2 -0.3 -1 -3 -10 -30 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 -10 * single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature i max. (pulsed) c i max. (dc) c 10ms 100ms * * * dc o peration 2
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